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VCES Low VCE(sat) IGBT with Diode High Speed IGBT with Diode Combi Packs Short Circuit SOA Capability IXSH 30 N60U1 IXSH 30 N60AU1 600 V 600 V
IC25 50 A 50 A
VCE(sat) 2.5 V 3.0 V
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TJ = 125C, RG = 33 W Clamped inductive load, L = 100 mH VGE = 15 V, VCE = 360 V, TJ = 125C RG = 33 W, non repetitive TC = 25C
Maximum Ratings 600 600 20 30 50 30 100 ICM = 60 @ 0.8 VCES 10 200 -55 ... +150 150 -55 ... +150 V V V V A A A A
TO-247 AD
G
C
E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Features ms W C C C * International standard package JEDEC TO-247 AD * High frequency IGBT with guaranteed Short Circuit SOA capability * IGBT and anti-parallel FRED in one package * 2nd generation HDMOSTM process * Low VCE(sat) - for low on-state conduction losses * MOS Gate turn-on - drive simplicity Applications
Mounting torque
1.13/10 Nm/lb.in. 6 300 g C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 5 TJ = 25C TJ = 125C 8 500 8 100 30N60U1 30N60AU1 2.5 3.0 V V mA mA nA V V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 750 mA, VGE = 0 V = 2.5 mA, VCE = VGE
* * * * *
AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
Advantages * Space savings (two devices in one package) * Easy to mount with 1 screw (isolated mounting screw hole) * Reduces assembly time and cost * High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
92714F (12/96)
(c) 2000 IXYS All rights reserved
1-6
IXSH 30N60U1 IXSH 30N60AU1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 7 13 100 2760 VCE = 25 V, VGE = 0 V, f = 1 MHz 240 51 110 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 34 47 Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = 4.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = 4.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 30N60U1 30N60AU1 30N60U1 30N60AU1 30N60U1 30N60AU1 60 130 400 30N60U1 30N60AU1 30N60AU1 400 200 2.5 60 130 4.2 540 340 600 340 12 6 1000 525 1500 700 150 45 63 S A pF pF pF nC nC nC ns ns ns ns ns mJ ns ns mJ ns ns ns ns mJ mJ 0.63 K/W 0.25 K/W
Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
TO-247 AD (IXSH) Outline
gfs IC(on) C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 % VGE = 15 V, VCE = 10 V
1.5 2.49
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.6 10 150 35 15 50 V A ns ns
IF = IC90, VGE = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IC90, VGE = 0 V, -diF/dt = 240 A/ms VR = 360 V TJ = 125C IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ = 25C
1 K/W
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-6
IXSH 30N60U1 IXSH 30N60AU1
Fig.1 Saturation Characteristics
60
TJ = 25C
Fig.2 Output Characterstics
100
TJ = 25C VGE = 15V
VGE = 15V
50
13V
80
IC - Amperes
IC - Amperes
40 30 20 10 0
9V 7V
11V
60
13V
40 20 0
11V 9V
0
1
2
3
4
5
0
2
4
6
8
10 12 14 16 18 20
VCE - Volts
VCE - Volts
Fig.3 Collector-Emitter Voltage vs. Gate-Emitter Voltage
10 9 8 7
TJ = 25C
Fig.4 Temperature Dependence of Output Saturation Voltage
1.8 1.6
VGE = 15V IC = 60A
VCE(sat) - Normalized
VCE - Volts
1.4 1.2
IC = 30A
6 5 4 3 2 1 0 8 9 10 11 12 13
IC = 15A IC = 30A
IC = 60A
1.0 0.8 0.6 -50
IC = 15A
14
15
-25
0
25
50
75
100 125 150
VGE - Volts
TJ - Degrees C
Fig.5 Input Admittance
60
VCE = 10V
Fig.6 Temperature Dependence of Breakdown and Threshold Voltage
1.3
BV / VGE(th) - Normalized
50
1.2 1.1 1.0 0.9 0.8 0.7 -50
VGE(th)
BVCES IC = 3mA
IC - Amperes
40 30
TJ = 25C
20
TJ = 125C
10 0
TJ = - 40C
IC = 2.5mA
5
6
7
8
9
10 11 12 13 14 15
-25
0
25
50
75
100 125 150
VGE - Volts
TJ - Degrees C
(c) 2000 IXYS All rights reserved
3-6
IXSH 30N60U1 IXSH 30N60AU1
Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current
1000
TJ = 125C RG = 10W Eoff (-A) hi-speed
Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG
10.0
1000
TJ = 125C IC = 30A
10.0
tfi - nanoseconds
tfi - nanoseconds
Eoff - milliJoules
500
tfi (-A) hi-speed
5.0
500
tfi (-A), hi-speed
Eoff (-A), hi-speed
5.0
250
2.5
250
2.5
0
0
10
20
30
40
50
0.0 60
0
0
10
20
30
40
0.0 50
IC - Amperes
RG - Ohms
Fig.9 Gate Charge Characteristic Curve
15 12 9 6 3 0 0 25 50 75 100 125 150
IC = 30A VCE = 300V
Fig.10 Turn-Off Safe Operating Area
100
TJ = 125C
10
RG = 4.7W dV/dt < 6V/ns
IC - Amperes
VGE - Volts
1
0.1
0.01 0 100 200 300 400 500 600
Qg - nanocoulombs
VCE - Volts
Fig.11 Transient Thermal Impedance
1
D=0.5
ZthJC (K/W)
0.1 D=0.2
D=0.1 D=0.05 D=0.02 D = Duty Cycle
0.01 D=0.01
Single pulse
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
(c) 2000 IXYS All rights reserved
Eoff - millijoules
750
7.5
750
7.5
4-6
IXSH 30N60U1 IXSH 30N60AU1
Fig.12 Maximum Forward Voltage Drop
100 80 25
Fig.13 Peak Forward Voltage VFR and Forward Recovery Time tfr
TJ = 125C
1000 800
VFR
Current - Amperes
60 40 20 0 0.5
TJ = 100C
15 10 5
tfr
600 400 200 0 600
TJ = 25C
0 1.0 1.5 2.0 2.5 0 100 200 300 400 500
Voltage Drop - Volts
diF /dt - A/s
Fig.14 Junction Temperature Dependence off IRM and Qr
1.4 1.2 1.0 0.8
IRM
Fig.15 Reverse Recovery Chargee
4
TJ = 100C VR = 350V IF = 30A
max.
Qr - nanocoulombs
Normalized IRM /Qr
3
2
typ. IF = 60A
0.6 0.4 0.2 0.0 0
Qr
1
IF = 30A IF = 15A
0 40 80 120 160 1 10 100 1000
TJ - Degrees C
diF /dt - A/s
Fig.16 Peak Reverse Recovery Current
40
TJ = 100C VR = 350V IF = 30A
max.
Fig.17 Reverse Recovery Time
0.8
IF = 30A
max.
TJ = 100C VR = 350V
trr - nanoseconds
30
0.6
typ. IF = 60A
IRM - Amperes
typ. IF = 60A
20
IF = 30A IF = 15A
0.4
IF = 30A IF = 15A
10
0.2
0 200 400 600
0.0 0 200 400 600
diF /dt - A/s
diF /dt - A/s
(c) 2000 IXYS All rights reserved
5-6
tfr - nanoseconds
TJ = 150C
20
IF = 37A
VFR - Volts
IXSH 30N60U1 IXSH 30N60AU1
Fig.18 Diode Transient Thermal resistance junction to case
1.00
RthJC - K/W
0.10
0.01 0.001
0.01
0.1
1
Pulse Width - Seconds
(c) 2000 IXYS All rights reserved
6-6

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